Browsing by Subject "Gallium arsenide"

Now showing items 1-9 of 9

    • Article  

      Delta(δ)-doping of semiconductor nanowires 

      Zervos, Matthew (2013)
      The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
    • Article  

      Efficient spin detection across the hybrid Co/GaAs schottky interface 

      Trypiniotis, Theodossis; Tse, D. H. Y.; Steinmuller, S. J.; Cho, W. S.; Bland, J. A. C. (2007)
      The electron spin detection efficiency was studied across Co/GaAs structures using photoexcitation techniques. Two sets of samples were prepared where the substrate surface was pretreated by annealing prior to growth for ...
    • Article  

      Electric control of the spin Hall effect by intervalley transitions 

      Okamoto, N.; Kurebayashi, H.; Trypiniotis, Theodossis; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, J.; Mašek, J.; Jungwirth, T.; Barnes, C. H. W. (2014)
      Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
    • Article  

      Electrical determination of the spin relaxation time of photoexcited electrons in GaAs 

      Kurebayashi, H.; Trypiniotis, Theodossis; Lee, K.; Easton, S.; Ionescu, A.; Farrer, I.; Ritchie, D. A.; Bland, J. A. C.; Barnes, C. H. W. (2010)
      Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin ...
    • Conference Object  

      Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs 

      Jonker, B. T.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; Stroud, R. M.; Sullivan, J. M.; Erwin, S. C.; Lüpke, G.; Zhao, H. B.; Ren, Y. H.; Sun, B.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (Institute of Electrical and Electronics Engineers Inc., 2003)
      Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
    • Article  

      Electronic properties of core-shell nanowire resonant tunneling diodes 

      Zervos, Matthew (2014)
      The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
    • Article  

      Large ultrafast optical nonlinearities in As-rich GaAs 

      Benjamin, S. D.; Othonos, Andreas S.; Smith, P. W. E. (1994)
      The measurement of large Ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than ...
    • Article  

      Magnetic properties of Fe3O4 thin films grown on different substrates by laser ablation 

      Paramês, M. L.; Viskadourakis, Z.; Rogalski, M. S.; Mariano, J.; Popovici, N.; Giapintzakis, John; Conde, O. (2007)
      Magnetite thin films have been grown onto (1 0 0)Si, (1 0 0)GaAs and (0 0 0 1)Al2O3, at substrate temperatures varying from 473 to 673 K, by UV pulsed laser ablation of Fe3O4 targets in reactive atmospheres of O2 and Ar, ...
    • Article  

      Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1) 

      Paramês, M. L.; Viskadourakis, Z.; Giapintzakis, John; Rogalski, M. S.; Conde, O. (2007)
      Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in ...